tlmw330. document number 83290 rev. 1.2, 27-sep-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19225 power smd led description this device have been designed to meet the increas- ing demand for white smd led. the package of the tlmw330. is the plcc-2. it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled with a mixture of epoxy and tag phosphor. the tag phosphor converts the blue emission par- tially to yellow, which mixes with the remaining blue to give white. features ? high efficient ingan technology chromaticity coordinate categorized according to cie1931 per packing unit luminous intensity ratio in one packing unit i vmax /i vmin 1.75 typical color temperature 5500 k esd class 1 eia and ice standard package compatible with infrared, vapor phase and wave solder processes according to cecc available in 8 mm tape reel lead-free device applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax backlighting for audio and video equipment backlighting in office equipment indoor and outdoor message boards flat backlight for lcds, switches and symbols illumination purposes, alternative to incandescent lamps general use parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlmw330. part color, luminous intensity angle of half intensity ( ? ) technology TLMW3300 white, i v = 500 mcd (typ.) 60 ingan / tag on sic parameter test condition symbol value unit reverse voltage v r 5v dc forward current t amb 50 c i f 30 ma surge forward current t p 10 si fsm 0.1 a power dissipation t amb 50 c p v 127 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c
www.vishay.com 2 document number 83290 rev. 1.2, 27-sep-04 tlmw330. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified white tlmw330. chromaticity coordi nate classification luminous intensit y classification storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w parameter test condition part symbol min typ. max unit luminous intensity i f = 20 ma TLMW3300 i v 250 500 mcd chromaticity coordinate x acc. to cie 1931 i f = 20 ma TLMW3300 x 0.315 0.365 chromaticity coordinate y acc. to cie 1931 i f = 20 ma TLMW3300 y 0.290 0.440 angle of half intensity i f = 20 ma ? 60 deg forward voltage i f = 20 ma v f 3.7 4.2 v reverse voltage i r = 10 av r 5v temperature coefficient of v f i f = 20 ma tc vf - 4 mv/k temperature coefficient of i v i f = 20 ma tc iv - 0.5 % / k parameter test condition symbol value unit group x y min max min max 3a 0.2900 0.3025 y = 1.4 x - 0.121 y = 1.4 x - 0.071 3b 0.3025 0.3150 y = 1.4 x - 0.121 y = 1.4 x - 0.071 3c 0.2900 0.3025 y = 1.4 x - 0.171 y = 1.4 x - 0.121 3d 0.3025 0.3150 y = 1.4 x - 0.171 y = 1.4 x - 0.121 4a 0.3150 0.3275 y = 1.4 x - 0.121 y = 1.4 x - 0.071 4b 0.3275 0.3400 y = 1.4 x - 0.121 y = 1.4 x - 0.071 4c 0.3150 0.3275 y = 1.4 x - 0.171 y = 1.4 x - 0.121 4d 0.3275 0.3400 y = 1.4 x - 0.171 y = 1.4 x - 0.121 5a 0.3400 0.3525 y = 1.4 x - 0.121 y = 1.4 x - 0.071 5b 0.3525 0.3650 y = 1.4 x - 0.121 y = 1.4 x - 0.071 5c 0.3400 0.3525 y = 1.4 x - 0.171 y = 1.4 x - 0.121 5d 0.3525 0.3650 y = 1.4 x - 0.171 y = 1.4 x - 0.121 group luminous intensity (mcd) min max ya 250 400 yb 320 500 za 400 630 zb 500 800
tlmw330. document number 83290 rev. 1.2, 27-sep-04 vishay semiconductors www.vishay.com 3 typical characteristics (tamb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature for ingan figure 3. relative luminous intensity vs. forward current 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 19033 r thja = 400k/w t amb - ambient temperature ( c) p - power dissipation (mw) v 0 5 10 15 20 25 30 35 40 0 102030405060708090100 t amb - ambient temperature ( c) 19034 i - forward current ( ma) f 0.01 0.1 1 10 1 10 100 i f - forward current ( ma ) 16194 i - relative luminous intensity vrel figure 4. forward current vs. forward voltage figure 5. relative intensity vs. wavelength figure 6. rel. luminous intensity vs. ambient temperature 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v f - forward voltag e(v) 19035 f i - forward current ( ma ) 0 10 20 30 40 50 60 70 80 90 100 400 450 500 550 600 650 700 750 800 - wavelength ( nm ) 16196 i - relative luminous intensity v rel 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 16197 i - relative luminous intensity vrel t amb - ambient temperature ( c) 0 1020 304050607080 90100
www.vishay.com 4 document number 83290 rev. 1.2, 27-sep-04 tlmw330. vishay semiconductors figure 7. chromaticity coordinate shift vs. forward current figure 8. forward voltage vs. ambient temperature figure 9. rel. luminous intens ity vs. angular displacement 0.315 0.320 0.325 0.330 0.335 0.340 0.345 16198 f - chromaticity coordinate shift (x,y) x y i f - forward current ( ma ) white 060 50 40 30 20 10 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 16199 i - forward voltag e(v) f t amb - ambient temperature ( c) 0 1020 304050607080 90100 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l figure 10. coordinates of colorgroups figure 11. change of forward voltage vs. ambient temperature 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 19037 x coordinates 3a y and y coordinates 3b 4a 4b 5a 5b 3c 3d 4c 4d 5c 5d -300 -200 -100 0 100 200 300 400 500 600 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 19036 10 ma 30 ma 20 ma v - change of forward voltage (mv) ? f
tlmw330. document number 83290 rev. 1.2, 27-sep-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
www.vishay.com 6 document number 83290 rev. 1.2, 27-sep-04 tlmw330. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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